Package / Case  

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Mounting Type  

Surface Mount

Mount  

Surface Mount

Contact Plating  

Tin

Number of Pins  

3

Transistor Element Material  

SILICON

Voltage - Gate Threshold (Vgs(th)) (Max) @ Id  

4V @ 150μA

Turn Off Delay Time  

38 ns

Power Dissipation (Max)  

230W Tc

Number of Elements  

1

Drive Voltage (Max Rds On, Min Rds On)  

10V

Current - Continuous Drain (Id) @ 25℃  

120A Tc

Published  

2011

Series  

HEXFET®

Packaging  

Tube

Operating Temperature  

-55°C~175°C TJ

JESD-609 Code  

e3

Part Status  

Discontinued

Moisture Sensitivity Level (MSL)  

1 (Unlimited)

Number of Terminations  

2

ECCN Code  

EAR99

Additional Feature  

AVALANCHE RATED, ULTRA-LOW RESISTANCE, HIGH RELIABILITY

Terminal Form  

GULL WING

Peak Reflow Temperature (Cel)  

260

Time@Peak Reflow Temperature-Max (s)  

30

JESD-30 Code  

R-PSSO-G2

Element Configuration  

Single

Operating Mode  

ENHANCEMENT MODE

Power Dissipation  

230W

Case Connection  

DRAIN

Turn On Delay Time  

15 ns

FET Type  

N-Channel

Transistor Application  

SWITCHING

Rds On (Max) @ Id, Vgs  

5.8m Ω @ 75A, 10V

Input Capacitance (Ciss) (Max) @ Vds  

4750pF @ 50V

Gate Charge (Qg) (Max) @ Vgs  

110nC @ 10V

Rise Time  

64ns

Vgs (Max)  

±20V

Fall Time (Typ)  

65 ns

Continuous Drain Current (ID)  

120A

Gate to Source Voltage (Vgs)  

20V

Drain-source On Resistance-Max  

0.0058Ohm

Drain to Source Breakdown Voltage  

75V

Pulsed Drain Current-Max (IDM)  

480A

Width  

9.65mm

Length  

10.67mm

Height  

4.83mm

RoHS Status  

ROHS3 Compliant

Radiation Hardening  

No

REACH SVHC  

No SVHC